Solid-state image pickup apparatus and electronic equipment

ABSTRACT

A solid-state image pickup apparatus according to a first aspect of the present technology includes a photoelectric conversion section that generates and holds a charge in response to incident light, a transfer section that includes a V-NW transistor (Vertical Nano Wire transistor) and transfers the charge held in the photoelectric conversion section, and an accumulation section that includes a wiring layer connected to a drain of the transfer section including the V-NW transistor and accumulates the charge transferred by the transfer section. The present technology is applicable to a CMOS image sensor, for example.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of U.S. patentapplication Ser. No. 16/496,619, filed on Sep. 23, 2019, which is a U.S.National Phase of International Patent Application No. PCT/JP2018/010392filed on Mar. 16, 2018, which claims priority benefit of Japanese PatentApplication No. JP 2017-071599 filed in the Japan Patent Office on Mar.31, 2017. Each of the above-referenced applications is herebyincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present technology relates to a solid-state image pickup apparatusand electronic equipment, and more particularly, to a solid-state imagepickup apparatus in which a transistor is formed by use of a V-NW(Vertical Nano Wire) and electronic equipment.

BACKGROUND ART

Presently, in a development field of a CMOS image sensor, for example,various noise reduction techniques have been suggested in order toimplement photo counting for detecting weak light in units of photon.Hereinafter, read noise that becomes a hindrance in the case ofperforming the photo counting or the like will be described.

FIG. 1 is an equivalent circuit diagram depicting a generalconfiguration example of a 4-transistor type CIS (CMOS Image Sensor)that becomes mainstream as a structure of a CMOS Image Sensor. Asdepicted in FIG. 1 , the 4-transistor type CIS has a PD (photodiode) 11as a photoelectric conversion section, a transfer gate transistor 12, acharge accumulation section 13, an amplification transistor 14, aselection transistor 15, and a reset transistor 17.

FIG. 2 depicts a cross-sectional diagram in the case of using a planartransistor in which four types of transistors of the 4-transistor typeCIS depicted in FIG. 1 are formed in a planar shape on a Si substrate.

In the case of FIG. 2 , the charge accumulation section 13 is formed bya floating diffusion layer (hereinafter, referred to as an FD (floatingdiffusion)). Hereinafter, the charge accumulation section 13 is alsoreferred to as an FD 13. Further, a drain of the amplificationtransistor 14 and a source of the selection transistor 15 are connectedvia an n-type diffusion layer 16.

Meanwhile, it is known that capacitance around the FD 13 or eachtransistor causes read noise that may be generated in the 4-transistortype CIS depicted in FIGS. 1 and 2 . Particularly, it is known that thecapacitance around the FD 13 largely contributes to the read noise andreduction in the capacitance around the FD 13 permits read noise to besuppressed (for example, see NPL 1).

With regard to the capacitance around the FD 13, it is known that thecapacitance of the PN junction forming the FD 13 may occupyapproximately 40% of the capacitance around the FD 13 (for example, seeNPL 2).

CITATION LIST Non Patent Literature

[NPL 1]

“Noise Reduction Techniques and Scaling Effects towards Photon CountingCMOS Image Sensors” [Ref. 1: Sensors 2016, 16, 514]

[NPL 2]

“Analysis and Reduction of Floating Diffusion Capacitance Components ofCMOS Image Sensor for Photon-Countable Sensitivity” [Ref. 2: Proc. IISW2015, pp 120-123]

SUMMARY Technical Problems

As described above, the capacitance of the PN junction forming the FD 13occupies a large portion of the capacitance around the FD 13. Therefore,when the capacitance of the PN junction is reduced, it is possible tosuppress the read noise in the 4-transistor type CIS. However, since theFD 13 is realized by forming the PN junction on the Si substrate, thereduction is limited. Accordingly, even suppression of the read noise islimited.

Further, the FD 13 is formed by the PN junction, and thereby a leakagecurrent cannot be eliminated between a P-type area and an N-type area ofthe PN junction, so that generation of a dark current is also caused.

Note that the above-described problem is not limited to the 4-transistortype CIS, but common to a CIS having an FD.

The present technology has been made in view of such circumstances andis capable of suppressing read noise due to the FD.

Solution to Problems

A solid-state image pickup apparatus according to a first aspect of thepresent disclosure includes a photoelectric conversion section thatgenerates and holds a charge in response to incident light; a transfersection that includes a V-NW transistor and transfers the charge held inthe photoelectric conversion section; and an accumulation section thatincludes a wiring layer connected to a drain of the transfer sectionincluding the V-NW transistor and accumulates the charge transferred bythe transfer section.

The accumulation section can include the wiring layer having no PNjunction.

The solid-state image pickup apparatus according to the first aspect ofthe present disclosure can further include a reset section that resetsthe charge accumulated in the accumulation section; an amplificationsection that provides the charge accumulated in the accumulation sectionas an electrical signal; and a selection section that selectivelyoutputs the electrical signal converted by the amplification section toa latter part, in which at least one of the reset section, theamplification section, or the selection section can include a V-NWtransistor.

The solid-state image pickup apparatus according to the first aspect ofthe present disclosure can further include an insulating film formedbetween the photoelectric conversion section and a gate of the V-NWtransistor forming the transfer section.

The insulating film formed between the photoelectric conversion sectionand the gate of the V-NW transistor forming the transfer section can bean impurity-containing insulating film.

In a surface of a source of the V-NW transistor forming the transfersection connected to the photoelectric conversion section, a Fermi levelcan be pinned by an impurity diffused from the impurity-containinginsulating film.

The V-NW transistor of the solid-state image pickup apparatus accordingto the first aspect of the present disclosure can be obtained by forminga semiconductor pillar having a diameter of 50 nm or less in a verticaldirection with respect to a substrate in a state in which one end of thesemiconductor pillar serves as a source, another end thereof serves as adrain, and a gate which controls a conduction state is formed in anouter circumference of the semiconductor pillar.

Electronic equipment according to a second aspect of the presentdisclosure is mounted with the solid-state image pickup apparatusincluding a photoelectric conversion section that generates and holds acharge in response to incident light; a transfer section that includes aV-NW transistor and transfers the charge held in the photoelectricconversion section; and an accumulation section that includes a wiringlayer connected to a drain of the transfer section including the V-NWtransistor and accumulates the charge transferred by the transfersection.

The V-NW transistor in the electronic equipment according to the secondaspect of the present disclosure can be obtained by forming asemiconductor pillar having a diameter of 50 nm or less in a verticaldirection with respect to a substrate in a state in which one end of thesemiconductor pillar serves as a source, another end thereof serves as adrain, and a gate which controls a conduction state is formed in anouter circumference of the semiconductor pillar.

A solid-state image pickup apparatus according to a third aspect of thepresent disclosure includes a photoelectric conversion section thatgenerates and holds a charge in response to incident light; a transfersection that transfers the charge held in the photoelectric conversionsection; an accumulation section that accumulates the charge transferredby the transfer section; a reset section that resets the chargeaccumulated in the accumulation section; an amplification section thatprovides the charge accumulated in the accumulation section as anelectrical signal; and a selection section that selectively outputs theelectrical signal converted by the amplification section to a latterpart, in which at least one of the transfer section, the reset section,the amplification section, or the selection section includes a V-NWtransistor.

A solid-state image pickup apparatus according to a fourth aspect of thepresent disclosure includes a photoelectric conversion section that isformed in a substrate; a transistor that transfers a charge generated inthe photoelectric conversion section; and a wiring layer that is formedon the substrate and connected to the transistor, in which thetransistor has a semiconductor area extending in a vertical directionwith respect to the substrate, an insulating film formed around thesemiconductor area, and a gate formed with the insulating filminterposed between the gate and the semiconductor area.

The semiconductor area can be formed cylindrically, and one end of thesemiconductor area can be connected to the wiring layer and another endof the semiconductor area can be connected to the photoelectricconversion section.

The charge can be accumulated in capacitance formed between the wiringlayer and the substrate.

Advantageous Effects of Invention

According to the present technology, it is possible to suppress readnoise.

According to the present technology, it is possible to improve an arearate of the photoelectric conversion section in the solid-state imagepickup apparatus.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an equivalent circuit diagram depicting a generalconfiguration example of a 4-transistor type CIS.

FIG. 2 is a vertical cross-sectional diagram in the case of forming the4-transistor type CIS by using a planar transistor.

FIG. 3 is a vertical cross-sectional diagram depicting a solid-stateimage pickup apparatus to which the present technology is applied.

FIG. 4 is a top view diagram depicting the solid-state image pickupapparatus to which the present technology is applied.

FIG. 5 is a vertical cross-sectional diagram depicting a manufacturingprocess of the solid-state image pickup apparatus to which the presenttechnology is applied.

FIG. 6 is a vertical cross-sectional diagram depicting the manufacturingprocess of the solid-state image pickup apparatus to which the presenttechnology is applied.

FIG. 7 is a vertical cross-sectional diagram depicting the manufacturingprocess of the solid-state image pickup apparatus to which the presenttechnology is applied.

FIG. 8 is a vertical cross-sectional diagram depicting the manufacturingprocess of the solid-state image pickup apparatus to which the presenttechnology is applied.

FIG. 9 is a vertical cross-sectional diagram depicting a firstmodification of the solid-state image pickup apparatus.

FIG. 10 is a vertical cross-sectional diagram depicting a secondmodification of the solid-state image pickup apparatus.

FIGS. 11A, 11B, 11C, 11D, 11E, 11F, and 11G are diagrams depicting anexample of a shape capable of being adopted by a semiconductor pillarand a gate electrode.

FIG. 12 is a block diagram depicting an example of a schematicconfiguration of an in-vivo information acquisition system.

FIG. 13 is a block diagram depicting an example of schematicconfiguration of a vehicle control system.

FIG. 14 is a diagram of assistance in explaining an example ofinstallation positions of an outside-vehicle information detectingsection and an imaging section.

DESCRIPTION OF EMBODIMENT

Hereinafter, a best mode (hereinafter, referred to as an embodiment) forcarrying out the present technology will be described in detail withreference to the drawings.

Configuration Example of Solid-State Image Pickup Apparatus According toPresent Embodiment

A solid-state image pickup apparatus according to the present embodimentis realized by using a V-NW transistor in which each transistor of a4-transistor type CIS depicted in FIG. 1 is formed on a Si substrate ina vertical direction. FIG. 3 is a vertical cross-sectional diagramindicating a configuration example of the solid-state image pickupapparatus, and FIG. 4 is a top view diagram depicting a configurationexample of the solid-state image pickup apparatus.

Note that an equivalent circuit of the solid-state image pickupapparatus according to the present embodiment depicted in FIGS. 3 and 4is common to that depicted in FIG. 1 . The solid-state image pickupapparatus according to the present embodiment is a 4-transistor type,and further, the present technology is applicable to the solid-stateimage pickup apparatus other than the 4-transistor type. Further, thesolid-state image pickup apparatus according to the present embodimentmay be any one of a front-illuminated type and a back-illuminated type.

Here, the V-NW transistor is a transistor obtained by forming asemiconductor pillar having a diameter of 50 nm or less, preferably 30nm or less and extending in a vertical direction with respect to asubstrate in a state in which one end of the semiconductor pillar servesas a source (S), another end thereof serves as a drain (D), and a gate(G) which controls a conduction state is formed in an outercircumference of the semiconductor pillar. Note that one transistor maybe formed by a piece of V-NW or by a plurality of V-NWs formed inparallel.

Specifically, a transfer gate transistor (TRG) 22, an amplificationtransistor (AMP) 24, a selection transistor (SEL) 25, and a resettransistor (RST) 27 each including the V-NW transistor depicted in FIG.3 correspond to the transfer gate transistor 12, the amplificationtransistor 14, the selection transistor 15, and the reset transistor 17in an equivalent circuit depicted in FIG. 1 , respectively.

In the transfer gate transistor 22 including the V-NW transistor, asource that is one end of the semiconductor pillar is connected to thePD 11 formed on the Si substrate. Further, a drain that is another endof the semiconductor pillar is connected to a charge accumulationsection 23 via a contact including an n-type diffusion area (n+). A gateelectrode 53 (FIG. 7 ) is formed via a gate insulating film 52 (FIG. 7 )in the outer circumference of a semiconductor pillar gate of thetransfer gate transistor 22. An insulating film 32 is formed between thegate electrode 53 and the PD 11. A boron-containing silicon oxide film(BSG: Boro-Silicate Glass) is applicable to the insulating film 32, forexample.

The charge accumulation section 23 corresponds to the chargeaccumulation section 13 in the equivalent circuit depicted in FIG. 1 .Note, however, that, in a previous configuration depicted in FIG. 2 ,the charge accumulation section 13 is an FD; further, in the solid-stateimage pickup apparatus, the charge accumulation section 23 is formed bya wiring layer of Top Plate. A drain of the transfer gate transistor 22that is the V-NW transistor and a source of the reset transistor 27 thatis the V-NW transistor are connected to the charge accumulation section23 including the wiring layer. In addition, the charge accumulationsection 23 including the wiring layer is connected to a gate electrodeof the amplification transistor 24 that is the V-NW transistor.

A source of the reset transistor 27 that is the V-NW transistor isconnected to the charge accumulation section 23 and a drain thereof isconnected to a power supply VDD (not depicted) via an n-type diffusionlayer (VDD(n+)) 18 formed within the Si substrate.

A drain of the amplification transistor 24 that is the V-NW transistoris connected to a source of the selection transistor 25 via a wiringlayer 26 of Top Plate. A drain of the selection transistor 25 that isthe V-NW transistor is connected to a vertical signal line VSL (notdepicted) via an n-type diffusion layer (VSL(n+)) 19 formed in the Sisubstrate.

An insulating film 31 is formed between the n-type diffusion layer 18and each gate electrode of the amplification transistor 24 and the resettransistor 27, and between the n-type diffusion layer 19 and a gateelectrode of the selection transistor 25. A silicon dioxide film (NSG:No doped Silicate Glass) is applicable to the insulating film 31, forexample.

In the solid-state image pickup apparatus according to the presentembodiment depicted in FIG. 3 , the charge accumulation section 23 isaimed at being formed by using the wiring layer having no PN junction inplace of the FD having the PN junction. Thereby, the capacitance aroundthe FD or each transistor that causes read noise can be largely reducedin comparison with a past case in which the charge accumulation section13 is formed by the FD, and therefore read noise can be suppressed.Further, a leakage current is not generated in the PN junction, andtherefore a dark current can be suppressed from being generated.

Further, each transistor is formed by using the V-NW transistor tothereby make an occupied area of each transistor small in comparisonwith a past case in which each transistor is formed by using a planartransistor. Further, the drain of the amplification transistor 24 andthe source of the selection transistor 25 are connected via the wiringlayer 26, and thereby the amplification transistor 24 and the selectiontransistor 25 can be compactly arranged. As described above, throughminiaturization of each transistor or a device of an arrangement, anarea ratio of the PD 11 in the solid-state image pickup apparatus can beimproved, and further, the number of saturated electrons and lightsensitivity of the PD 11 can be improved.

Method for Manufacturing Solid-State Image Pickup Apparatus According toPresent Embodiment

Next, a method for manufacturing the solid-state image pickup apparatuswill be described with reference to FIGS. 5 to 8 . FIGS. 5 to 8 arevertical cross-sectional diagrams depicting a manufacturing process ofthe solid-state image pickup apparatus.

In the beginning, as depicted in FIG. 5 , the PD 11 is formed on the Sisubstrate, and further, the n-type diffusion layer 18 connected to thepower supply VDD and the n-type diffusion layer 19 connected to thevertical signal line VSL are formed. Afterwards, for example, BSG isformed on the PD 11 as the insulating film 32. Further, for example, NSGis formed on the n-type diffusion layers 18 and 19 as the insulatingfilm 31. In place of BSG, NSG may be formed as the insulating film 32 onthe PD 11. Further, an opening part 41 is formed in a position in whicheach V-NW transistor of the insulating films 31 and 32 is formed.

Next, as depicted in FIG. 6 , the semiconductor pillars 51 each formingthe V-NW through a selective epitaxial growth are formed in the openingparts 41 formed in the insulating films 31 and 32.

Note that a specific forming method for the V-NW is arbitrary. A methoddescribed in “Vertical Silicon Nanowire Field Effect Transistors withnanoscale Gate-All-Around” [Ref. 3: Nanoscale Research Letters 201611:210] is applicable to the above method, for example. Alternatively,the selective epitaxial growth using Au etc. described in “Realizationof a Silicon Nanowire Vertical Surround-Gate Field Effect Transistors”[Ref. 4: small 2006, 2, No. 1 pp 85-88] may be used for the abovemethod, for example.

In a lower part of the semiconductor pillar 51 forming the V-NW as thetransfer gate 22, a concentration gradient may be made so as to easilytransfer charges from the PD 11.

In an upper part of each semiconductor pillar 51, the n-type diffusionarea 61 is formed as a contact to be connected to the wiring layer 26 orthe charge accumulation section 23 as a wiring layer.

Next, as depicted in FIG. 7 , the gate insulating film 52 is formed inthe outer circumference of each semiconductor pillar 51. Then, the gateelectrode 53 is formed in the outer circumference thereof and therebythe transfer gate transistor 22, the amplification transistor 24, theselection transistor 25, and the reset transistor 27 are formed as theV-NW transistor.

Lastly, an inter-film insulating film (not depicted) is formed on then-type diffusion area 61 formed in an upper part of the semiconductorpillar 51. Then, as depicted in FIG. 8 , the wiring layer 26 and thecharge accumulation section 23 as a wiring layer are formed.

Note that in the case in which BSG is used as the insulating film 32 onthe PD 11, B (boron) is diffused from the BSG 32. Therefore, the Fermilevel on a surface of a source (lower part of the semiconductor pillar51) of the transfer gate transistor 22 can be pinned, so that a darkcurrent can be prevented from being generated from the pinned area.

Further, in the formation of the V-NW transistor, doping of impuritieson an Si substrate required in a process of forming a previous planartransistor is not performed. Therefore, it is possible to reduce RTN(Random Telegraph Noise) in which a fluctuation of the doped impuritiesis supposed to be one of causes.

Modifications

FIG. 9 is a vertical cross-sectional diagram depicting a firstmodification of the solid-state image pickup apparatus according to thepresent embodiment.

According to the first modification, the PD 11 and the transfer gatetransistor 22 are formed on one substrate as a stacked type of stackinga plurality of semiconductor substrates and configuring the solid-stateimage pickup apparatus. Further, the other transistors (theamplification transistor 24, the selection transistor 25, and the resettransistor 26) are formed on another substrate that is stacked thereon.Further, the charge accumulation section 23 including the wiring layeris divided into charge accumulation sections 23-1 and 23-2. Further,each of the charge accumulation sections 23-1 and 23-2 is formed into adifferent stacked substrate. For example, contacts including Cu isformed in respective surfaces opposite to the charge accumulationsections 23-1 and 23-2 formed into different substrates. Then, both thecontacts are joined and both the substrates are electrically connected.Note that the contacts are not limited to Cu but an arbitrary metal canbe adopted.

According to the first modification, in addition to effects of theabove-described solid-state image pickup apparatus according to thepresent embodiment, an effect of stacking substrates to therebyminiaturize the solid-state image pickup apparatus can be obtained.

FIG. 10 is a vertical cross-sectional diagram depicting a secondmodification of the solid-state image pickup apparatus according to thepresent embodiment.

According to the second modification, as a stacked type of stacking aplurality of semiconductor substrates and configuring the solid-stateimage pickup apparatus, the V-NW transistor and the previous planartransistor are used for a structure of a pixel transistor at the sametime.

Specifically, in one substrate, the PD 11, the transfer gate transistor22 and reset transistor 27 including the V-NW transistor, and the chargeaccumulation section 23 are formed, and a contact including Cu isformed, for example, in the charge accumulation section 23. Further, theamplification transistor 14 and selection transistor 15 including theplanar transistor are formed in another substrate that is stackedthereon. Further, the wiring layer 26 is formed on a drain of theamplification transistor 14 and a contact including Cu is formed, forexample, on the wiring layer 26. Then, the contact of the chargeaccumulation section 23 and the contact of the wiring layer 26 arejoined, and both of the substrates are electrically connected eachother. Note that the contacts are not limited to Cu but an arbitrarymetal can be adopted.

According to the second modification, in addition to effects of theabove-described solid-state image pickup apparatus according to thepresent embodiment and the first modification, an effect capable ofusing the previous planar transistor at the same time can be obtained.

FIGS. 11A, 11B, 11C, 11D, 11E, 11F, and 11G depict an example of a shapethat can be adopted by the semiconductor pillar 51 and gate electrode 53that form the V-NW transistor.

FIG. 11A depicts an example in which the semiconductor pillar 51 has acolumnar shape and the gate electrode 53 is formed in an annular shapein the outer circumference of the semiconductor pillar 51 with theinsulating film 52 interposed therebetween. FIG. 11B depicts an examplein which the semiconductor pillar 51 has the columnar shape and the gateelectrode 53 is formed in such a shape as to occupy half or more of theannular shape in the outer circumference of the semiconductor pillar 51with the insulating film 52 interposed therebetween and a remainingportion in the outer circumference of the semiconductor pillar 51 is notformed with the insulating film 52 and the gate electrode 53. FIG. 11Cdepicts an example in which the semiconductor pillar 51 has a columnarshape and the gate electrode 53 is formed in such a shape as to occupyhalf or more of the annular shape in the outer circumference of thesemiconductor pillar 51 with the insulating film 52 interposedtherebetween and two portions are not formed with the insulating film 52and the gate electrode 53.

FIG. 11D depicts an example in which the semiconductor pillar 51 has asubstantially rectangular columnar shape in which corners of arectangular column are rounded and the gate electrode 53 is formed in arectangular annular shape in the outer circumference of thesemiconductor pillar 51 with the insulating film 52 interposedtherebetween. FIG. 11E depicts an example in which the semiconductorpillar 51 has a substantially rectangular columnar shape and the gateelectrode 53 is formed in such a shape as to occupy half or more of arectangular annular shape in the outer circumference of thesemiconductor pillar 51 with the insulating film 52 interposedtherebetween and a remaining portion in the outer circumference of thesemiconductor pillar 51 is not formed with the insulating film 52 andthe gate electrode 53. FIG. 11F depicts an example in which thesemiconductor pillar 51 has a substantially rectangular columnar shapeand the gate electrode 53 is formed in such a shape as to occupy half ormore of a rectangular annular shape in the outer circumference of thesemiconductor pillar 51 with the insulating film 52 interposedtherebetween and two portions are not formed with the insulating film 52and the gate electrode 53. FIG. 11G depicts an example in which thesemiconductor pillar 51 has a substantially rectangular columnar shapeand the gate electrode 53 is formed in such a shape as to occupy half ormore of a rectangular annular shape in the outer circumference of thesemiconductor pillar 51 with the insulating film 52 interposedtherebetween in a state in which the insulating film 52 and the gateelectrode 53 is not formed at four corners.

Note that a shape capable of being adopted by the semiconductor pillar51 and the gate electrode 53 is not limited to examples depicted inFIGS. 11A, 11B, 11C, 11D, 11E, 11F, and 11G. The above shape may be anelliptic column, a polygonal column of a triangular column or more, or asubstantially polygonal column in which corners thereof are rounded.

Application Example to In-vivo Information Acquisition System

The technology (the present technology) according to the presentdisclosure can be applied to various products. For example, thetechnology according to the present disclosure may be applied to anendoscopic operation system.

FIG. 12 is a block diagram depicting an example of a schematicconfiguration of an in-vivo information acquisition system of a patientusing a capsule type endoscope, to which the technology according to anembodiment of the present disclosure (present technology) can beapplied.

The in-vivo information acquisition system 10001 includes a capsule typeendoscope 10100 and an external controlling apparatus 10200.

The capsule type endoscope 10100 is swallowed by a patient at the timeof inspection. The capsule type endoscope 10100 has an image pickupfunction and a wireless communication function and successively picks upan image of the inside of an organ such as the stomach or an intestine(hereinafter referred to as in-vivo image) at predetermined intervalswhile it moves inside of the organ by peristaltic motion for a period oftime until it is naturally discharged from the patient. Then, thecapsule type endoscope 10100 successively transmits information of thein-vivo image to the external controlling apparatus 10200 outside thebody by wireless transmission.

The external controlling apparatus 10200 integrally controls operationof the in-vivo information acquisition system 10001. Further, theexternal controlling apparatus 10200 receives information of an in-vivoimage transmitted thereto from the capsule type endoscope 10100 andgenerates image data for displaying the in-vivo image on a displayapparatus (not depicted) on the basis of the received information of thein-vivo image.

In the in-vivo information acquisition system 10001, an in-vivo imageimaged a state of the inside of the body of a patient can be acquired atany time in this manner for a period of time until the capsule typeendoscope 10100 is discharged after it is swallowed.

A configuration and functions of the capsule type endoscope 10100 andthe external controlling apparatus 10200 are described in more detailbelow.

The capsule type endoscope 10100 includes a housing 10101 of the capsuletype, in which a light source unit 10111, an image pickup unit 10112, animage processing unit 10113, a wireless communication unit 10114, apower feeding unit 10115, a power supply unit 10116 and a control unit10117 are accommodated.

The light source unit 10111 includes a light source such as, forexample, a light emitting diode (LED) and irradiates light on an imagepickup field-of-view of the image pickup unit 10112.

The image pickup unit 10112 includes an image pickup element and anoptical system including a plurality of lenses provided at a precedingstage to the image pickup element. Reflected light (hereinafter referredto as observation light) of light irradiated on a body tissue which isan observation target is condensed by the optical system and introducedinto the image pickup element. In the image pickup unit 10112, theincident observation light is photoelectrically converted by the imagepickup element, by which an image signal corresponding to theobservation light is generated. The image signal generated by the imagepickup unit 10112 is provided to the image processing unit 10113.

The image processing unit 10113 includes a processor such as a centralprocessing unit (CPU) or a graphics processing unit (GPU) and performsvarious signal processes for an image signal generated by the imagepickup unit 10112. The image processing unit 10113 provides the imagesignal for which the signal processes have been performed thereby as RAWdata to the wireless communication unit 10114.

The wireless communication unit 10114 performs a predetermined processsuch as a modulation process for the image signal for which the signalprocesses have been performed by the image processing unit 10113 andtransmits the resulting image signal to the external controllingapparatus 10200 through an antenna 10114A. Further, the wirelesscommunication unit 10114 receives a control signal relating to drivingcontrol of the capsule type endoscope 10100 from the externalcontrolling apparatus 10200 through the antenna 10114A. The wirelesscommunication unit 10114 provides the control signal received from theexternal controlling apparatus 10200 to the control unit 10117.

The power feeding unit 10115 includes an antenna coil for powerreception, a power regeneration circuit for regenerating electric powerfrom current generated in the antenna coil, a voltage booster circuitand so forth. The power feeding unit 10115 generates electric powerusing the principle of non-contact charging.

The power supply unit 10116 includes a secondary battery and storeselectric power generated by the power feeding unit 10115. In FIG. 12 ,in order to avoid complicated illustration, an arrow mark indicative ofa supply destination of electric power from the power supply unit 10116and so forth are omitted. However, electric power stored in the powersupply unit 10116 is supplied to and can be used to drive the lightsource unit 10111, the image pickup unit 10112, the image processingunit 10113, the wireless communication unit 10114 and the control unit10117.

The control unit 10117 includes a processor such as a CPU and suitablycontrols driving of the light source unit 10111, the image pickup unit10112, the image processing unit 10113, the wireless communication unit10114 and the power feeding unit 10115 in accordance with a controlsignal transmitted thereto from the external controlling apparatus10200.

The external controlling apparatus 10200 includes a processor such as aCPU or a GPU, a microcomputer, a control board or the like in which aprocessor and a storage element such as a memory are mixedlyincorporated. The external controlling apparatus 10200 transmits acontrol signal to the control unit 10117 of the capsule type endoscope10100 through an antenna 10200A to control operation of the capsule typeendoscope 10100. In the capsule type endoscope 10100, an irradiationcondition of light upon an observation target of the light source unit10111 can be changed, for example, in accordance with a control signalfrom the external controlling apparatus 10200. Further, an image pickupcondition (for example, a frame rate, an exposure value or the like ofthe image pickup unit 10112) can be changed in accordance with a controlsignal from the external controlling apparatus 10200. Further, thesubstance of processing by the image processing unit 10113 or acondition for transmitting an image signal from the wirelesscommunication unit 10114 (for example, a transmission interval, atransmission image number or the like) may be changed in accordance witha control signal from the external controlling apparatus 10200.

Further, the external controlling apparatus 10200 performs various imageprocesses for an image signal transmitted thereto from the capsule typeendoscope 10100 to generate image data for displaying a picked upin-vivo image on the display apparatus. As the image processes, varioussignal processes can be performed such as, for example, a developmentprocess (demosaic process), an image quality improving process(bandwidth enhancement process, a super-resolution process, a noisereduction (NR) process and/or image stabilization process) and/or anenlargement process (electronic zooming process). The externalcontrolling apparatus 10200 controls driving of the display apparatus tocause the display apparatus to display a picked up in-vivo image on thebasis of generated image data. Alternatively, the external controllingapparatus 10200 may also control a recording apparatus (not depicted) torecord generated image data or control a printing apparatus (notdepicted) to output generated image data by printing.

Heretofore, an example of the in-vivo information acquisition system towhich the technology according to the present disclosure can be appliedhas been described. The technology according to the present disclosurecan be applied to the image pickup unit 10112 among configurationsdescribed above.

Application Examples to Moving Objects

The technology (the present technology) according to the presentdisclosure can be applied to various products. For example, thetechnology according to the present disclosure may be realized as anapparatus that is mounted on any kind of moving objects including anautomobile, an electric vehicle, a hybrid electric vehicle, amotorcycle, a bicycle, a personal mobility, an airplane, a drone, aship, a robot, and the like.

FIG. 13 is a block diagram depicting an example of schematicconfiguration of a vehicle control system as an example of a mobile bodycontrol system to which the technology according to an embodiment of thepresent disclosure can be applied.

The vehicle control system 12000 includes a plurality of electroniccontrol units connected to each other via a communication network 12001.In the example depicted in FIG. 13 , the vehicle control system 12000includes a driving system control unit 12010, a body system control unit12020, an outside-vehicle information detecting unit 12030, anin-vehicle information detecting unit 12040, and an integrated controlunit 12050. In addition, a microcomputer 12051, a sound/image outputsection 12052, and a vehicle-mounted network interface (I/F) 12053 areillustrated as a functional configuration of the integrated control unit12050.

The driving system control unit 12010 controls the operation of devicesrelated to the driving system of the vehicle in accordance with variouskinds of programs. For example, the driving system control unit 12010functions as a control device for a driving force generating device forgenerating the driving force of the vehicle, such as an internalcombustion engine, a driving motor, or the like, a driving forcetransmitting mechanism for transmitting the driving force to wheels, asteering mechanism for adjusting the steering angle of the vehicle, abraking device for generating the braking force of the vehicle, and thelike.

The body system control unit 12020 controls the operation of variouskinds of devices provided to a vehicle body in accordance with variouskinds of programs. For example, the body system control unit 12020functions as a control device for a keyless entry system, a smart keysystem, a power window device, or various kinds of lamps such as aheadlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or thelike. In this case, radio waves transmitted from a mobile device as analternative to a key or signals of various kinds of switches can beinput to the body system control unit 12020. The body system controlunit 12020 receives these input radio waves or signals, and controls adoor lock device, the power window device, the lamps, or the like of thevehicle.

The outside-vehicle information detecting unit 12030 detects informationabout the outside of the vehicle including the vehicle control system12000. For example, the outside-vehicle information detecting unit 12030is connected with an imaging section 12031. The outside-vehicleinformation detecting unit 12030 makes the imaging section 12031 imagean image of the outside of the vehicle, and receives the imaged image.On the basis of the received image, the outside-vehicle informationdetecting unit 12030 may perform processing of detecting an object suchas a human, a vehicle, an obstacle, a sign, a character on a roadsurface, or the like, or processing of detecting a distance thereto.

The imaging section 12031 is an optical sensor that receives light, andwhich outputs an electric signal corresponding to a received lightamount of the light. The imaging section 12031 can output the electricsignal as an image, or can output the electric signal as informationabout a measured distance. In addition, the light received by theimaging section 12031 may be visible light, or may be invisible lightsuch as infrared rays or the like.

The in-vehicle information detecting unit 12040 detects informationabout the inside of the vehicle. The in-vehicle information detectingunit 12040 is, for example, connected with a driver state detectingsection 12041 that detects the state of a driver. The driver statedetecting section 12041, for example, includes a camera that images thedriver. On the basis of detection information input from the driverstate detecting section 12041, the in-vehicle information detecting unit12040 may calculate a degree of fatigue of the driver or a degree ofconcentration of the driver, or may determine whether the driver isdozing.

The microcomputer 12051 can calculate a control target value for thedriving force generating device, the steering mechanism, or the brakingdevice on the basis of the information about the inside or outside ofthe vehicle which information is obtained by the outside-vehicleinformation detecting unit 12030 or the in-vehicle information detectingunit 12040, and output a control command to the driving system controlunit 12010. For example, the microcomputer 12051 can perform cooperativecontrol intended to implement functions of an advanced driver assistancesystem (ADAS) which functions include collision avoidance or shockmitigation for the vehicle, following driving based on a followingdistance, vehicle speed maintaining driving, a warning of collision ofthe vehicle, a warning of deviation of the vehicle from a lane, or thelike.

In addition, the microcomputer 12051 can perform cooperative controlintended for automatic driving, which makes the vehicle to travelautonomously without depending on the operation of the driver, or thelike, by controlling the driving force generating device, the steeringmechanism, the braking device, or the like on the basis of theinformation about the outside or inside of the vehicle which informationis obtained by the outside-vehicle information detecting unit 12030 orthe in-vehicle information detecting unit 12040.

In addition, the microcomputer 12051 can output a control command to thebody system control unit 12020 on the basis of the information about theoutside of the vehicle which information is obtained by theoutside-vehicle information detecting unit 12030. For example, themicrocomputer 12051 can perform cooperative control intended to preventa glare by controlling the headlamp so as to change from a high beam toa low beam, for example, in accordance with the position of a precedingvehicle or an oncoming vehicle detected by the outside-vehicleinformation detecting unit 12030.

The sound/image output section 12052 transmits an output signal of atleast one of a sound and an image to an output device capable ofvisually or auditorily notifying information to an occupant of thevehicle or the outside of the vehicle. In the example of FIG. 13 , anaudio speaker 12061, a display section 12062, and an instrument panel12063 are illustrated as the output device. The display section 12062may, for example, include at least one of an on-board display and ahead-up display.

FIG. 14 is a diagram depicting an example of the installation positionof the imaging section 12031.

In FIG. 14 , the imaging section 12031 includes imaging sections 12101,12102, 12103, 12104, and 12105.

The imaging sections 12101, 12102, 12103, 12104, and 12105 are, forexample, disposed at positions on a front nose, sideview mirrors, a rearbumper, and a back door of the vehicle 12100 as well as a position on anupper portion of a windshield within the interior of the vehicle. Theimaging section 12101 provided to the front nose and the imaging section12105 provided to the upper portion of the windshield within theinterior of the vehicle obtain mainly an image of the front of thevehicle 12100. The imaging sections 12102 and 12103 provided to thesideview mirrors obtain mainly an image of the sides of the vehicle12100. The imaging section 12104 provided to the rear bumper or the backdoor obtains mainly an image of the rear of the vehicle 12100. Theimaging section 12105 provided to the upper portion of the windshieldwithin the interior of the vehicle is used mainly to detect a precedingvehicle, a pedestrian, an obstacle, a signal, a traffic sign, a lane, orthe like.

Incidentally, FIG. 14 depicts an example of photographing ranges of theimaging sections 12101 to 12104. An imaging range 12111 represents theimaging range of the imaging section 12101 provided to the front nose.Imaging ranges 12112 and 12113 respectively represent the imaging rangesof the imaging sections 12102 and 12103 provided to the sideviewmirrors. An imaging range 12114 represents the imaging range of theimaging section 12104 provided to the rear bumper or the back door. Abird's-eye image of the vehicle 12100 as viewed from above is obtainedby superimposing image data imaged by the imaging sections 12101 to12104, for example.

At least one of the imaging sections 12101 to 12104 may have a functionof obtaining distance information. For example, at least one of theimaging sections 12101 to 12104 may be a stereo camera constituted of aplurality of imaging elements, or may be an imaging element havingpixels for phase difference detection.

For example, the microcomputer 12051 can determine a distance to eachthree-dimensional object within the imaging ranges 12111 to 12114 and atemporal change in the distance (relative speed with respect to thevehicle 12100) on the basis of the distance information obtained fromthe imaging sections 12101 to 12104, and thereby extract, as a precedingvehicle, a nearest three-dimensional object in particular that ispresent on a traveling path of the vehicle 12100 and which travels insubstantially the same direction as the vehicle 12100 at a predeterminedspeed (for example, equal to or more than 0 km/hour). Further, themicrocomputer 12051 can set a following distance to be maintained infront of a preceding vehicle in advance, and perform automatic brakecontrol (including following stop control), automatic accelerationcontrol (including following start control), or the like. It is thuspossible to perform cooperative control intended for automatic drivingthat makes the vehicle travel autonomously without depending on theoperation of the driver or the like.

For example, the microcomputer 12051 can classify three-dimensionalobject data on three-dimensional objects into three-dimensional objectdata of a two-wheeled vehicle, a standard-sized vehicle, a large-sizedvehicle, a pedestrian, a utility pole, and other three-dimensionalobjects on the basis of the distance information obtained from theimaging sections 12101 to 12104, extract the classifiedthree-dimensional object data, and use the extracted three-dimensionalobject data for automatic avoidance of an obstacle. For example, themicrocomputer 12051 identifies obstacles around the vehicle 12100 asobstacles that the driver of the vehicle 12100 can recognize visuallyand obstacles that are difficult for the driver of the vehicle 12100 torecognize visually. Then, the microcomputer 12051 determines a collisionrisk indicating a risk of collision with each obstacle. In a situationin which the collision risk is equal to or higher than a set value andthere is thus a possibility of collision, the microcomputer 12051outputs a warning to the driver via the audio speaker 12061 or thedisplay section 12062, and performs forced deceleration or avoidancesteering via the driving system control unit 12010. The microcomputer12051 can thereby assist in driving to avoid collision.

At least one of the imaging sections 12101 to 12104 may be an infraredcamera that detects infrared rays. The microcomputer 12051 can, forexample, recognize a pedestrian by determining whether or not there is apedestrian in imaged images of the imaging sections 12101 to 12104. Suchrecognition of a pedestrian is, for example, performed by a procedure ofextracting characteristic points in the imaged images of the imagingsections 12101 to 12104 as infrared cameras and a procedure ofdetermining whether or not it is the pedestrian by performing patternmatching processing on a series of characteristic points representingthe contour of the object. When the microcomputer 12051 determines thatthere is a pedestrian in the imaged images of the imaging sections 12101to 12104, and thus recognizes the pedestrian, the sound/image outputsection 12052 controls the display section 12062 so that a squarecontour line for emphasis is displayed so as to be superimposed on therecognized pedestrian. The sound/image output section 12052 may alsocontrol the display section 12062 so that an icon or the likerepresenting the pedestrian is displayed at a desired position.

Heretofore, an example of the vehicle control system to which thetechnology according to the present disclosure can be applied has beendescribed. The technology according to the present disclosure can beapplied to the imaging section 12031 among configurations describedabove.

Note that an embodiment of the present technology is not limited tothose described above and can be modified in various ways withoutdeparting from the gist of the present technology.

The present technology can have the following configurations:

(1) A solid-state image pickup apparatus including:

a photoelectric conversion section that generates and holds a charge inresponse to incident light;

a transfer section that includes a V-NW transistor (Vertical Nano Wiretransistor) and transfers the charge held in the photoelectricconversion section; and

an accumulation section that includes a wiring layer connected to adrain of the transfer section including the V-NW transistor andaccumulates the charge transferred by the transfer section.

(2) The solid-state image pickup apparatus according to (1), in whichthe accumulation section includes the wiring layer having no PNjunction.

(3) The solid-state image pickup apparatus according to (1) or (2),further including:

a reset section that resets the charge accumulated in the accumulationsection;

an amplification section that provides the charge accumulated in theaccumulation section as an electrical signal; and

a selection section that selectively outputs the electrical signalconverted by the amplification section to a latter part, in which

at least one of the reset section, the amplification section, or theselection section includes a V-NW transistor.

(4) The solid-state image pickup apparatus according to any one of (1)to (3), further including:

an insulating film formed between the photoelectric conversion sectionand a gate of the V-NW transistor forming the transfer section.

(5) The solid-state image pickup apparatus according to (4), in which

the insulating film formed between the photoelectric conversion sectionand the gate of the V-NW transistor forming the transfer section is animpurity-containing insulating film.

(6) The solid-state image pickup apparatus according to (5), in which

in a surface of a source of the V-NW transistor forming the transfersection connected to the photoelectric conversion section, a Fermi levelis pinned by an impurity diffused from the impurity-containinginsulating film.

(7) The solid-state image pickup apparatus according to any one of (1)to (6), in which

the V-NW transistor forms a semiconductor pillar having a diameter of 50nm or less in a vertical direction with respect to a substrate in astate in which one end of the semiconductor pillar serves as a source,another end thereof serves as a drain, and a gate which controls aconduction state is formed in an outer circumference of thesemiconductor pillar.

(8) Electronic equipment mounted with a solid-state image pickupapparatus,

the solid-state image pickup apparatus including:

-   -   a photoelectric conversion section that generates and holds a        charge in response to incident light;    -   a transfer section that includes a V-NW transistor (Vertical        Nano Wire transistor) and transfers the charge held in the        photoelectric conversion section; and    -   an accumulation section that includes a wiring layer connected        to a drain of the transfer section including the V-NW transistor        and accumulates the charge transferred by the transfer section.

(9) The electronic equipment according to (8), in which

the V-NW transistor forms a semiconductor pillar having a diameter of 50nm or less in a vertical direction with respect to a substrate in astate in which one end of the semiconductor pillar serves as a source,another end thereof serves as a drain, and a gate which controls aconduction state is formed in an outer circumference of thesemiconductor pillar.

(10) A solid-state image pickup apparatus including:

a photoelectric conversion section that generates and holds a charge inresponse to incident light;

a transfer section that transfers the charge held in the photoelectricconversion section;

an accumulation section that accumulates the charge transferred by thetransfer section;

a reset section that resets the charge accumulated in the accumulationsection;

an amplification section that provides the charge accumulated in theaccumulation section as an electrical signal; and

a selection section that selectively outputs the electrical signalconverted by the amplification section to a latter part, in which

at least one of the transfer section, the reset section, theamplification section, or the selection section includes a V-NWtransistor (Vertical Nano Wire transistor).

(11) A solid-state image pickup apparatus including:

a photoelectric conversion section that is formed in a substrate;

a transistor that transfers a charge generated in the photoelectricconversion section; and

a wiring layer that is formed on the substrate and connected to thetransistor, in which

the transistor has a semiconductor area extending in a verticaldirection with respect to the substrate, an insulating film formedaround the semiconductor area, and a gate formed with the insulatingfilm interposed between the gate and the semiconductor area.

(12) The solid-state image pickup apparatus according to (11), in which

the semiconductor area is formed cylindrically, and

one end of the semiconductor area is connected to the wiring layer andanother end of the semiconductor area is connected to the photoelectricconversion section.

(13) The solid-state image pickup apparatus according to (11) or (12),in which

the charge is accumulated in capacitance formed between the wiring layerand the substrate.

REFERENCE SIGNS LIST

11 PD, 12 Transfer gate transistor, 13 FD, 14 Amplification transistor,15 Selection transistor, 16 n-type diffusion area, 17 Reset transistor,18 n+-type diffusion layer, 19 n+-type diffusion layer, 22 Read-outtransistor, 23 Charge accumulation section, 24 Amplification transistor,25 Selection transistor, 26 Wiring layer, 27 Reset transistor, 31Insulating film, 32 Insulating film, 41 Opening part, 51 Semiconductorpillar, 52 Insulating film, 53 Gate electrode, 61 n-type diffusion area

What is claimed is:
 1. A solid-state image pickup apparatus, comprising:a photoelectric conversion section configured to generate and hold acharge based on incident light; a transfer section that includes a V-NWtransistor (Vertical Nano Wire transistor), wherein the transfer sectionis configured to transfer the charge held in the photoelectricconversion section; and an insulating film between the photoelectricconversion section and a gate of the V-NW transistor that forms thetransfer section, wherein the insulating film is an impurity-containinginsulating film that comprises boron.
 2. The solid-state image pickupapparatus according to claim 1, further comprising an accumulationsection that includes a wiring layer connected to a drain of thetransfer section including the V-NW transistor, wherein the accumulationsection is configured to accumulate the charge transferred by thetransfer section, and the wiring layer has no PN junction.
 3. Thesolid-state image pickup apparatus according to claim 2, furthercomprising: a reset section configured to reset the charge accumulatedin the accumulation section; an amplification section configured toprovide the charge accumulated in the accumulation section as anelectrical signal; and a selection section configured to selectivelyoutput the electrical signal provided by the amplification section to alatter part, wherein at least one of the reset section, theamplification section, or the selection section includes the V-NWtransistor.
 4. The solid-state image pickup apparatus according to claim1, wherein in a surface of a source of the V-NW transistor that formsthe transfer section connected to the photoelectric conversion section,a Fermi level is pinned by an impurity diffused from theimpurity-containing insulating film.
 5. The solid-state image pickupapparatus according to claim 1, wherein the V-NW transistor comprises asemiconductor pillar that has a diameter of 50 nm or less in a verticaldirection with respect to a substrate in a state in which a first end ofthe semiconductor pillar serves as a source, a second end of thesemiconductor pillar serves as a drain, and the gate is in an outercircumference of the semiconductor pillar, and the gate is configured tocontrol a conduction state of the V-NW transistor.
 6. A solid-stateimage pickup apparatus, comprising: a photoelectric conversion sectionconfigured to generate and hold a charge based on incident light; atransfer section that includes a V-NW transistor (Vertical Nano Wiretransistor), wherein the transfer section is configured to transfer thecharge held in the photoelectric conversion section; an insulating filmbetween the photoelectric conversion section and a gate of the V-NWtransistor that forms the transfer section, wherein the insulating filmis an impurity-containing insulating film that comprises boron; a resetsection configured to reset the charge; an amplification sectionconfigured to provide the charge as an electrical signal; and aselection section configured to selectively output the electrical signalprovided by the amplification section to a latter part, wherein at leastone of the transfer section, the reset section, the amplificationsection, or the selection section includes the V-NW transistor.